2SC2814

## 2SC3356

NPN SILICON EPITAXIAL TRANSISTOR
MICROWAVE LOW NOISE AMPLIFIER

DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.
FEATURES
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector-Base Voltage, VCBO | 20V
Collector-Emitter Voltage, VCEO | 12V
Emitter-Base Voltage, VEBO | 3V
Collector Current, IC | 100mA
Total Device Dissipation (TA = +25°C), PD | 200mW
Operating Junction Temperature, TJ | +150°C
Storage Temperature Range, Tstg | -65° to +150°C

Electrical Characteristics:
(TA = +25°C unless otherwise specified)

Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit
Forward Current Transfer Ratio | hFE | VCE =10V, IC = 20mA | 50 | 120 | 300 |
Gain-Bandwidth Product | fT | IC = 20mA, VCE = 10V, | - | 7 | - | GHz
Noise Figure | NF | IC = 7mA, VCB = 10V, f = 1GHz | - | 1,1 | 2 | dB