## 2SC2086
Silicon NPN Transistor
RF Amplifier

### The 2SC2086 is a silicon NPN epitaxial planer type transistor designed for RF amplifiers on HF band mobile radio applications.

| B C E

### Features:

- High Power Gain: Gpe >/= 13dB (VCC = 12V, PO = 0,3W, f = 27MHz)

### Application:

- Driver Amplifier Applications in HF Band

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)

Collector-Emitter Voltage (RBE = Infinity), VCEO | 35V
Collector-Base Voltage, VCBO | 75V
Emitter-Base Voltage, VEBO | 4V
Collector Current, IC | 1A
Collector Power Dissipation (TA = +25°C), PD | 0,8W
Operating Junction Temperature, TJ | +135°C
Storage Temperature Range, Tstg | -55° to +150°C
Thermal Resistance, Junction-to-Ambient, RthJA | 137,5°C/W

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit
Collector-Base Breakdown Voltage | V(BR)CBO | IC = 1mA, IE = 0 | 75 | - | - | V
Collector-Emitter Breakdown Voltage | V(BR)CEO | IC = 10mA, RBE = Infinity | 35 | - | - | V
Emitter-Base Breakdown Voltage | V(BR)EBO | IE = 1mA, IC = 0 | 4 | - | - | V
Collector Cutoff Current | ICBO | VCB = 30V IE = 0 | - | - | 10 | µA
Emitter Cutoff Current | IEBO | VEB = 3V, IC = 0 | - | - | 100 | µA
DC Forward Current Gain | hFE | VCE = 10V, IC = 100mA, Note 1 | 35 | 70 | 300 |
Power Output | PO | VCC = 12V, Pin = 15mW, f = 27MHz | 0,3 | 0,45 | - | W
Collector Efficiency |  | 50 | 60 | - | %

Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.